李京波教授2001年毕业于中国科学院半导体研究所，获得凝聚态物理博士学位，导师为夏建白院士。2001-2004年于美国伯克利劳伦斯国家实验室任博士后，2004年进入美国可再生能源国家实验室任助理研究员。2007年全职归国，受聘于中国科学院半导体研究所，任二级研究员、博士生导师。2009年获国家杰出青年基金、2015年起享受国务院特殊津贴并在同年入选科技部“中青年科技创新领军人才”、2016年入选国家级领军人才计划、2017年以第一完成人获“国家自然科学二等奖”、入选2017-2023年科睿唯安高被引学者榜单。2019年加入华南师范大学，任半导体科学技术研究院首任院长、工学部部长、二级教授、博士生导师。在基础研究、应用研究、半导体相关领域产业化方面具有丰富经验。发表SCI学术论文370余篇，论文他引次数超2.4万次，授权发明专利60余项，技术成果转化累计超过20亿元。2022年9月加入浙江大学，任求是特聘教授、博士生导师。

2022年江西省自然科学一等奖（排名第一）。

2021年安徽省科技进步一等奖（排名第一）。

2018年浙江省技术发明三等奖（排名第一）。

2015年享受国务院政府特殊津贴。

2014年获科技部“中青年科技创新领军人才”。

2009年获“国家杰出青年基金”（信息学部）。

李京波获奖情况：

（1）、“新型半导体深能级掺杂机制研究”获2017年国家自然科学二等奖（获奖人：李京波、盖艳琴、康俊、李树深、夏建白）。

（2）、“氮化物LED显示芯片用微纳米图形化蓝宝石衬底的关键技术及应用”获2021年安徽省科技进步一等奖（获奖人：李京波、刘建哲、徐良、夏建白）。

（3）、“低维光电材料与器件的基础研究”获2022年江西省自然科学一等奖（获奖人：李京波、霍能杰、肖文波）。

李京波人才称号和个人荣誉情况：

（1）、2009年获“国家杰出青年基金”

（2）、2016年入选国家级领军人才计划

（3）、2015年起享受国务院政府特殊津贴

（4）、2014年入选科技部“中青年科技创新领军人才”

（5）、2017年至2023年度入选“美国科睿唯安”全球“高被引学者”榜单

（6）、2019年获中共中央、国务院和中央军委共同颁发“建国70周年纪念章”

项目

2023年 杭州市富阳区引进高层次人才创业创新“5110”计划，碳化硅功率芯片产业化项目，负责人，1000万。

2020年 广东省“珠江人才计划创新创业团队”，新型半导体掺杂机制研究及器件应用，团队带头人，1200万。

2015年 中国科学院“创新国家团队：低维半导体光电器件创新国际团队”，负责人，320万。

2009年 国家自然科学基金委员会“国家杰出青年基金”，半导体掺杂机制和纳米材料的研究，负责人，200万。

2009年 科技部“863计划新材料技术领域重点项目”高效氮化物LED材料及芯片关键技术，负责人，948万。

文章

2023

Z. Zhang, L. Han, Z. Dan, H. Li, M. Yang, Y. Sun, Z. Zheng, N. Huo, D. Luo, W. Gao,* and Jingbo Li*, “Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible-Near-Infrared Photodetectors.”, ACS Appl. Nano Mater, 6, 4573−4583 (2023).

T. Zheng, M. Yang, Y. Pan, Z. Zheng, Y. Sun, L. Li, N. Huo, D. Luo, W. Gao,* and Jingbo Li*, “Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction”, ACS Appl. Mater. Interfaces, 15, 29363−29374 (2023).   

B. Yang, W. Gao,* H. Li, P. Gao, M. Yang, Y. Pan, C. Wang, Y. Yang, N. Huo, Z. Zheng* and Jingbo Li*, “Visible and infrared photodiode based on γ-InSe/ Ge van der Waals heterojunction for polarized detection and imaging”, Nanoscale, 15, 3520-3531 (2023).   

H, Li, J. Huang, P. Gao, B. Yang, Z. Lan, W. Gao,* F. Zhang,* M. Yang, Z. Zheng, N. Huo, and Jingbo Li*, Room-Temperature Near-Infrared and Self-Powered Photodetectors Based on Graphite/WTe2/Ge Mixed Van Der Waals Heterostructure”,  IEEE Transactions on Electron Devices, 70, 2358-2363 (2023). 

H. Liu, Y. Wang, C. Liu, W. Gao,* L. Han,* X. Wang, and Jingbo Li*, “GaN-on-Sapphire Vertical Trench MOSFET Array with High-Performance Ultraviolet (UV) Photorespons”, ACS Appl. Opt. Mater, 1, 1485–1491 (2023). 

Z. Dan, B. Yang, Q. Song, J. Chen, H. Li, W. Gao,* L. Huang, M. Zhang, M. Yang, Z. Zheng, N. Huo, L. Han,* and Jingbo Li*, “Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance”,  ACS Appl. Mater. Interfaces, 15, 18101−18113 (2023). 

Z. Chen, J. Huang, M. Yang, X. Liu, Z. Zheng, N. Huo, L. Han, D. Luo,* Jingbo Li,* and W. Gao*, “Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance”, ACS Appl. Mater. Interfaces, 15, 30504−30516 (2023). 

J. Huang, K. Shu, N. Bu, Jingbo Li, et al, “Reconfigurable WSe₂ Schottky heterojunctions for logic rectifiers and ultrafast photodetectors”, Sci. China Mater, (2023).  (accepted)

 J. Ma, J. Wang, Q. Chen, S. Chen, M. Yang, Y. Sun, Z. Zheng, N. Huo, Y. Yan,  Jingbo Li, W. Gao, “Vertical 1T’-WTe₂/WS₂ Schottky-Barrier Phototransistor with Polarity-Switching Behavior”, Adv. Electron. Mater, 2300672 (2023). (accepted)

Z. Huang, Z. Luo, Z. Deng, M. Yang, W. Gao, J. Yao, Y. Zhao, H. Dong, Z. Zheng,  Jingbo Li, “Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices”, Small Methods, 7, 2201571 (2023).  

S. Li, J. Zhang, L. Zhu, K. Zhang, W. Gao, Jingbo Li, N. Huo, “Reconfigurable and Broadband Polarimetric Photodetector”, Adv. Funct. Mater, 33, 2210268 (2023).  

Y. Yan, J. Li, H. Li, S. Li, Z. Li, W. Gao, Y. Jiang, X. Song, C. Xia, Jingbo Li, “Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors”, Appl. Phys. Lett, 122, 043505 (2023).  

S. Li, J. Zhang, Y. Li, K. Zhang, L. Zhu, W. Gao, Jingbo Li, N. Huo, “Anti-ambipolar and polarization-resolved behavior in MoTe₂ channel sensitized with low-symmetric CrOCl”, Appl. Phys, 122, 083503 (2023).  

L. Li, Q. Deng, Y. Sun, J. Zhang, T. Zheng, W. Wang, Y. Pan, W. Gao, J. Lu, Jingbo Li, N. Huo, “2D Short-Channel Tunneling Transistor Relying on Dual-Gate Modulation for Integrated Circuits Application”, Adv. Funct. Mater, 33, 2304591 (2023).

Z. Luo, H. Xu, W. Gao, M. Yang, Y. He, Z. Huang, J. Yao, M. Zhang, H. Dong, Y. Zhao, Z. Zheng, Jingbo Li, “High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS₂/Te Tunneling Heterostructure”, Small, 19, 2207615 (2023).

Y. Huang, H. Yu, W. Gao, Jingbo Li, et al. “Diverse modes regulated photoresponse and high-resolution imaging based on van der Waals semimetal PtTe 2/semiconductor MoTe 2 junctions”, Journal of Materials Chemistry C, 11, 5045-5055 (2023).

H. Wang, Y. Li, P. Gao, J. Wang, X. Meng, Y. Hu, Y. Yang, Z. Huang, W. Gao,  Z. Zheng, Z. Wei,  Jingbo Li, N. Huo, “Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure”, Adv. Mater, 2309371 (2023). (accepted)

W. Wu, Z. Liu, Z. Qiu, Z. Wu, Z. Li, X. Yang, L. Han, C. Li, N. Huo, X. Wang, J. Yao, Z. Zheng, Jingbo Li, “An Ultrasensitive ReSe₂/WSe₂ Heterojunction Photodetector Enabled by Gate Modulation and its Development in Polarization State Identification”, Adv. Optical Mater, 2301410 (2023). (accepted)

Q. Zheng, Z. Qiu, Q. Zhang, M. Yang, J. Lei, L. Han, L. Tang, Z. Zheng, X. Wang, Jingbo Li, “ReS₂ Nanosheet/WS₂ Nanosheet/p-GaN Substrate Dual Junction Photodetectors”, ACS Applied Nano Materials, 6, 15490-15497 (2023).

H. Liao, L. Huang, Jingbo Li, et al, “Strong anharmonicity-assisted low lattice thermal conductivities and high thermoelectric performance in double-anion Mo2 AB 2 (A= S, Se, Te; B= Cl, Br, I) semiconductors”, Chinese Physics B, 32, 107304 (2023).

W. Wu, X. Wang, Jingbo Li, “Gate-oxide interface performance improvement technology of 4H-SiC MOSFET”,  Chinese Science Bulletin, 68, 1777-1786 (2023).

W. Wu, C. Liu, L. Han, X. Wang, Jingbo Li, “Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT”, Applied Surface Science, 618, 156618 (2023).

J. Yan, X. Yang, X. Liu, C. Du, F. Qin, M. Yang, Z. Zheng, Jingbo Li, “Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection”, Adv. Sci, 10, 2207022 (2023).

J. Wei, Y. Bu, Q. Sai, Jingbo Li, et al. “Effect of high-temperature remelting on the properties of Sn-doped β-Ga 2 O 3 crystal grown using the EFG method”, CrystEngComm, 25, 4317-4324 (2023).

Y. Li, X. Ma, H. Bao, Jingbo Li, et al, “Carrier-driven magnetic and topological phase transitions in twodimensional III-V semiconductors”, Nano Res. 16, 3604 (2023).

Y. Li, X. Ma, H. Bao, J. Zhou*, F. Ma*, Jingbo Li*, “Carrier-driven magnetic and topological phase transitions in two-dimensional III-V semiconductors”, Nano Research, 16, 3443-3450 (2023).

2022

J. Yan, X. Zhu, X. Liu, C. Du, F. Qin, M. M. Yang, Z. Q. Zheng*, Jingbo Li*, “Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection”, Adv. Science, 9, 2207022 (2022).

S. Li, J. Zhang, L. Zhu, K. Zhang, W. Gao, Jingbo Li*, N. J. Huo*, “Reconfigurable and Broadband Polarimetric Photodetector”, Adv. Func. Mater., 33, 2210268 (2022).

Z. X. Chen, Q. Chen, Z. Chai, B. Wei, J. Wang, Y. Liu, Y. Shi*, Z. C. Wang*, Jingbo Li*, “Ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter”, Nano Research, 15, 4677 (2022).

Y. M. Sun, J. Xiong, X. Wu, W. Gao, N. J. Huo*, Jingbo Li*, “Highly sensitive infrared polarized photodetector enabled by out-of-plane PSN architecture composing of p-MoTe₂, semimetal-MoTe₂ and n-SnSe₂”, Nano Research, 15, 5384 (2022).

Y. Zhou, L. X. Han, Q. Song, W. Gao, M. M. Yang, Z. Zheng*, L. Huang, J. Yao, Jingbo Li,*, “Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector”, Science-China Materials, 65, 732 (2022).

N. Zhang, L. W. Wu, W. Gao, Q. Zhao, N. J. Huo*, Jingbo Li*, “Near-Infrared, Self-Powered and Polarization-Sensitive Photodetector Based on GeSe-MoTe₂ p-n Heterojunction”, Adv. Mater. Inter., 9，2200150 (2022).

L. W. Wu, W. Gao, Q. Zhao, N. J. Huo*, Jingbo Li*, “Polarity-Switchable and Self-Driven Photo-Response Based on Vertically Stacked Type-III GeSe/SnS₂ Heterojunction”, Adv. Mater. Inter., 9，2200150 (2022).

S. Li, B. Wang, L. Li, J. Li, M. Wang, G. Luo, X. Ren, Y. Yan*, Jingbo Li*, “Antimony-Doped p-Type In₂Se₃ for Heterophase Homojunction with High-Performance Reconfigurable Broadband Photovoltaic Effect”, Adv. Electron. Mater., 8，2200665 (2022).

P. Wen, L. Zhang, W. Gao, Q. Yue, H. Wang, Y. Huang, J. Wu, H. Yu, H. Chen, N. J Huo*, Jingbo Li*, “Gate-Tunable Photovoltaic Effect in MoTe₂ Lateral Homojunction”, Adv. Electron. Mater., 8，2101144 (2022).

L. Li, G. Gao, X. Liu, Y. Sun, J. Lei, Z. Chen, Z. Dan, W. Gao, T. Zheng, X. Wang, N. J. Huo*, Jingbo Li*, “Polarization-Resolved p-Se/n-WS₂ Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger”, Small, 18, 2202523(2022).

P. Gao, M. Yang, C. Wang, H. Li, B. Yang, Z. Q. Zheng, N. J. Huo, W. Gao*, D. X. Luo*, Jingbo Li*, “Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics”, Nanoscale, 14, 14603-14612 (2022).

M. J. Xia, D. Chen, Y. Li, X. Liu, W. Gao, H. Yu, Q. Zhao, N. Jiang, H. Zheng, C. Xia, N. J. Huo*, S. Chen*, Jingbo Li*, “A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors”, J. Phys. Chem. C., 126, 8152(2022).

J. Wu, D. X. Luo, P. Wen, X. Han, C. Wang, H. Yu, W. Gao, X. Liu, G. Konstantatos, Jingbo Li*, N. J Huo*, “Engineering the Polarization Sensitivity in All-2D Photodetectors Composed of Semimetal MoTe₂ and Semiconductor WS₂”, Adv. Opt. Mater., 10，2201902 (2022).

T. Zheng, M. M. Yang, Y. Sun, L. Han, Y. Pan, Q. Zhao, Z. Q. Zheng, N. J. Huo, W. Gao*, Jingbo Li*, “A solution-fabricated tellurium/silicon mixed-dimensional van der Waals heterojunction for self-powered photodetectors”, J. Mater. Chem. C.,10,  

7283-7293 (2022).

Y. Pan, Q. Zhao, F. Gao, M. Dai, W. Gao, T. Zheng, S. C. Su, Jingbo Li*, H. Chen*, “Strong In-Plane Optical and Electrical Anisotropies of Multilayered gamma-InSe for High-Responsivity Polarization-Sensitive Photodetectors”, ACS Appl. Mater.& Inter., 14，21383 (2022).

W. He, J. Li, Z. Liao, F. Lin, J. Wu, B. Wang, M. Wang, N. Liu, H. C. Chiu, H. Kuo, X. Lin, Jingbo Li, X. K. Liu*, “1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer”, Nanoscale Research Lett., 17, 14 (2022).

J. Xiong, Z. Dan, H. Li, S. Li, Y. Sun, W. Gao, N. J. Huo*, Jingbo Li, “Multifunctional GeAs/WS₂ Heterojunctions for Highly Polarization-Sensitive Photodetectors in the Short-Wave Infrared Range”, ACS Appl. Mater.& Inter., 14，22607-22614 (2022).

X. Cao, Z. Lei, B. Huang, A. Wei, L. Tao, Y. Yang, Z. Zheng, X. Feng, Jingbo Li, and Y. Zhao*, “Non-Layered Te/In₂S₃ Tunneling Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse”, Small, 18, 2200445(2022).

X. Liu, C. Shen, X. Li, T. X. Wang, M. He, L. Li, Y. Wang, Jingbo Li*, C. X. Xia*, “Magnetoelectric coupling effects on the band alignments of multiferroic In₂Se₃-CrI₃ trilayer heterostructures”, Nanoscale, 14, 5454 (2022).

Z. Lei, X. Zhang, Y. Zhao*, A. Wei, L. L. Tao*, Y. Yang, Z. Q. Zheng, L. Tao, P. Yu, Jingbo Li, “Enhanced Raman scattering on two-dimensional palladium diselenide”, Nanoscale, 14, 4181 (2022).

Y. M. Sun, L. Wu, M. M. Yang, M. Xia, W. Gao, D. X. Luo, N. J. Huo*, Jingbo Li*, “Anomalous Hall Effect and Magneto-Optic Kerr Effect in Pt/Co/Pt Heterostructure”, Magnetochemistry, 8, 56 (2022).

L. Zhang, X. Han, P. Wen, S. Zhang*, Z. Q. Zheng, Jingbo Li, W. Gao*, “Weyl-Semimetal TaIrTe₄/Si Nanostructures for Self-Powered Schottky Photodetectors”, ACS Appl. Nano Mater., 5，6523 (2022).

Z. Luo, M. M. Yang, D. Wu, Z. Huang, W. Gao, M. Zhang, Y. Zhou, Y. Zhao, Z. Q. Zheng*, Jingbo Li, “Rational Design of WSe₂/WS₂/WSe₂ Dual Junction Phototransistor Incorporating High Responsivity and Detectivity”, Small Method, 6，2200583 (2022).

M. M. Yang, Z. Luo, W. Gao, M. Zhang, L. Huang, Y. Zhao, J. Yao, F. Wu, Jingbo Li, Z. Q. Zheng*, “Robust Deposition of Sub-Millimeter WSe₂ Drive Ultrasensitive Gate-Tunable 2D Material Photodetectors”, Adv. Opt. Mater., 10，2200717 (2022).

X. Li, P. Yuan, L. Li, M. He, Jingbo Li, C. X. Xia*, “Sub-5-nm Monolayer GaSe MOSFET with Ultralow Subthreshold Swing and High On-State Current: Dielectric Layer Effects”, Phys. Rev. Appl., 18，044012 (2022).

X. Li, T. Liu, L. Li, M. He, C. Shen, Jingbo Li, C. X. Xia*, “Reconfigurable band alignment of m-GaS/n-XTe₂ (X = Mo, W) multilayer van der Waals heterostructures for photoelectric applications”, Phys. Rev. B, 106，125306 (2022).

2021

Y. Yan, S. Li, J. Du, H. Yang, X. Wang, X. Song, L. Li, X. Li, C. Xia,* Y. Liu*, Jingbo Li,* Z. M. Wei*, “Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near-Broken Band Alignment”, Adv. Science, 8，1903252 (2021).

H. X. Zhao, Y. Yan, X . Song, Z. N. Ma, T. Tian, Y. Jiang, X. Li, C. X. Xia*, Jingbo Li*, “Few-layer In_4/3P₂Se₆ nanoflakes for high detectivity photodetectors”, Nanoscale, 13, 3757 (2021).

Y. M. Sun, W. Gao, X. Li, C. Xia, H. Y. Chen, L. Zhang, D. X. Luo, W. J. Fan, N. J. Huo*, Jingbo Li*, “Anti-ambipolar behavior and photovoltaic effect in p-MoTe₂/n-InSe heterojunctions”, J. Mater. Chem. C, 9, 10372 (2021).

Y. Zhou, L. Zhang, W. Gao, M. M. Yang, J. T. Lu, Z. Q. Zheng*, Y. Zhao, J. D. Yao, Jingbo Li*, “A reasonably designed 2D WS₂ and CdS microwire heterojunction for high-performance photoresponse”, Nanoscale, 13, 5660 (2021).

J. T. Lu, Z. Q. Zheng*, J. D. Yao, W. Gao, Y. Xiao, M. L. Zhang, and Jingbo Li*, “An asymmetric contact-induced self-powered 2D In₂S₃ photodetector towards high-sensitivity and fast-response”, Nanoscale, 12, 7196 (2021).

L. Li, J. Zhang, C. Yang, L. Huang, J. Zhang, J. Bai, C. Redshaw, X. Feng*, C. Cao*, N. J. Huo, Jingbo Li*, and B. Z. Tang*, “Stimuli-Responsive Materials from Ferrocene-Based Organic Small Molecule for Wearable Sensors”, Small,17, 2103125(2021).

P. T. Wen, S. Li, W. Shu, Y. Lun, H. Zhang, W. Gao, L. Zhang, F. Dang, Q. Zhao, B. Li, H. Yu, N. J. Huo*, Jingbo Li*, “Anisotropic Shubnikov-de Haas effect in topological Weyl semimetal MoTe₂”, Appl. Phys. Lett. 119, 243501 (2021).

X. N. Han, P. Wen, L. Zhang*, W. Gao, H. Chen, S. Zhang, N. J. Huo, B. S, Zou, Jingbo Li*, “A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe₂/TaIrTe₄/n-MoS₂ van der Waals Heterojunction”, ACS Appl. Mater.& Inter., 13，61544 (2021).

J. Kang, Jingbo Li, S. H. Wei, “Atomic-scale understanding on the physics and control of intrinsic point defects in lead halide perovskites”, Appl. Phys. Rev. 8, 031302 (2021).

Z. Dan, C. Wang, W. Gao, K. Shu, L. Wu, W. Wang, Q. Zhao, X. J. Liu, X. Liu*. N. J. Huo*, Jingbo Li*, “Improved photodetection performance enabled by gradient alloyed quantum dots”, APL Materials 8, 031302 (2021).

J. X. Xiong, Y. Sun, L. Wu, W. Wang, W. Gao, N. J. Huo*, Jingbo Li*, “High-Performance Self-Driven Polarization-Sensitive Photodetectors Based on GeAs/InSe Heterojunction”, Adv. Opt. Mater. 9, 2101017 (2021).

K. X. Shu, W. Gao, F. Wan, S. Yang, Z. Dan, L. Wu, Q. Zhao, C. Xue, N. J. Huo*, and Jingbo Li*, “High-Performance Broadband Photodetectors Based on n-MoS₂/p-Ge_0.9Sn_0.1 Heterojunctions”, ACS Appl. Electron. Mater., 3，3218 (2021).

Q. Yue, W. Gao*, P. Wen, Q. Chen, M. Yang, Z. Zheng, D. Luo, N. J. Huo, F. Zhang*, Jingbo Li*, “High-performance DUV-visible 4H-SiC-based multilayered SnS2 dual-mode photodetectors”, J. Mater. Chem. C., 9, 15662 (2021).

M. M. Yang, W. Gao*, M. He, S. Zhang, Y. Huang, Z. Q. Zheng*, D. Luo, F. Wu, C. Xia, Jingbo Li*, “Self-driven SnS_1-xSe_x alloy/GaAs heterostructure based unique polarization-sensitive photodetectors”, Nanoscale, 13, 15193 (2021).

Q. Zhao, F. Gao, H. Y. Chen*, W. Gao, M. Xia, Y. Pan, H. Shi, S. Su, X. Fang, and Jingbo Li*, “High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe₂ van der Waals heterojunction with strong interlayer transition”, Materials Horizons, 8, 3113 (2021).

M. M. Yang, J. Yan, C. Ma, W. Gao, Y. Zhou, J. Yao, Z. Q. Zheng*, Jingbo Li*, “Optical Resonance Coupled with Electronic Structure Engineering toward High-Sensitivity Photodetectors”, Adv. Opt. Mater. 9, 2101374 (2021).

L. Li, P. Wen, Y. Yang*, N. J. Huo*, Jingbo Li*, “Improved anisotropy and piezoelectricity by applying in-plane deformation in monolayer WS₂”, J. Mater. Chem. C., 9, 1396 (2021).

Z. Liu, J. Wu, Jingbo Li*, “In-plane anisotropic electronic properties in layered alpha In₂Se₃”, J. Appl. Phys., 130, 015103 (2021).

J. T. Lu, M. Zhang, J. Yao, Z. Q. Zheng*, L. Tao, Y. Zhao, Jingbo Li*, “Nonlayered In₂S₃/Al₂O₃/CsPbBr₃ Quantum Dot Heterojunctions for Sensitive and Stable Photodetectors”, ACS Appl. Nano Mater., 4, 5106 (2021).

M. Z. Zhong, H. Meng, S. Liu, H. Yang, W. Shen, C. Hu, J. Yang, Z. Ren, B. Li, Y. Liu, J. He*, Q. L. Xia*, Jingbo Li, Z. M. Wei*, “In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic”, ACS Nano., 15, 1701 (2021).

L. X. Han, M. Yang, P. T. Wen, W. Gao*, N. J. Huo*, Jingbo Li, “A high-performance self-powered photodetector based on a 1D Te-2D WS₂ mixed-dimensional heterostructure dagger”, Nanoscale Advances, 3, 2657 (2021).

H. Song, P. Zhu, J. Fang, Z. Zhou, H. Yang, K. Wang, Jingbo Li, D. P. Yu, Z. M. Wei*, Z. M. Liao, “Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor”, Phys. Rev. B 103, 125304 (2021).

M. Z. Zhong, H. Meng, S. J. Liu, H. Yang, W. Shen, C. Hu, J. H. Yang, Z. Ren, B. Li, Y. Y. Liu, J. He*, Q. L. Xia*, Z. M. Wei*, Jingbo Li, “In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic”, ACS Nano, 15, 1701 (2021).

X. T. Wang, F. Zhong, J. Kang, C. Liu, M. Lei, L. F. Pan, H. Wang, Z. Zhou, Y. Cui, K. Liu, J. L. Wang, G. Shen, C. X. Shan, Jingbo Li, W. D. Hu*, Z. M. Wei*, “Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe”, Science-China Materials, 64, 1230 (2021).

L, Song, L. Huang*, W. B. Xiao*, Jingbo Li, “Role of octahedral deformation in the broad-band emission in Mn-doped lead halide perovskite: First-principles investigation for the case of CsPbX₃ (X = Cl, Br, I)”, Appl. Phys. Lett. 118, 163901 (2021).

R. Bai, T. Xiong, J. Zhou, Y. Liu, W. Shen, C. Hu, F. Yan, K. Wang, D. Wei, Jingbo Li, J. H. Yang*, Z. M. Wei, “Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe₄ nanoribbon”, InfoMat, 4，e12258(2021).

Y. J. Yang, Z. Liu, K. Shu, L. Li, and Jingbo Li*, “Improved Performances of CVD-Grown MoS₂ Based Phototransistors Enabled by Encapsulation”, Adv. Mater. Inter., 8，2100164 (2021).

K. Shu, N. Wang, N. J. Huo, F. Wan, Jingbo Li, C. L. Xue*, “Negative Magnetoresistance in the GeSn Strip”, ACS Appl. Mater.& Inter., 13，29960 (2021).

J. Li, Y. Yin*, N. Zeng, F. Liao, M. Lian, X. Zhang, K. Zhang, Y. Zhang, Jingbo Li, “A dual-gate and Gamma-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation”, Semicond. Sci. Technol., 36, 095036 (2021).

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